View S8986_5528602.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

features l sensor has x-ray monitoring photodiode l compactness 5.1 mm thickness excluding i/o connector part l high dynamic range: 12 bit l long-term stability for use under 100,000 shots (60 kvp, 30 mr x-ray irradiation) l resolution: 10 lp/mm l 1700 (h) 1200 (v) pixel format l pixel size: 20 20 m l coupled with gos for x-ray imaging l 100 % fill factor l low dark signal l low readout noise l mpp operation l ac/dc x-ray source adapted applications l general x-ray imaging l non-destructive inspection l intra-oral x-ray imaging in dental diagnosis image sensor ccd area image sensor front-illuminated fft-ccds for x-ray imaging S8986, s10128 S8986 is an fft-ccd image sensor ideal for intra-oral x-ray imaging in dental diagnosis. S8986 has about 2 mega (1700 1200) p ixels each of which is 20 20 m. S8986 delivers low dark current when operated in mpp (multi pinned-phase) mode. s10128 is an easy-to-use x-ray imaging module using S8986, with added functions such as a cable assembly and x-ray trigger circ uit. s10128 is pin compatible with s10127 (number of pixels is increased). s10128 is low cost type for s8985-02 and adapted both ac and dc x-r ay sources. 1 selection guide type no. cooling number of total pixels number of active pixels active area [mm (h) mm (v)] S8986 s10128 non-cooled 1708 1202 1700 1200 34 24 general ratings parameter S8986 s10128 ccd structure full frame transfer fill factor 100 % number of active pixels 1700 (h) 1200 (v) pixel size 20 (h) 20 (v) m active area 34 (h) 24 (v) mm vertical clock phase 2 phase horizontal clock phase 2 phase output circuit emitter follower without load resistance dimensional outline 39.5 (h) 27.5 (v) mm 42.6 (h) 30.6 (v) mm reliability 100,000 shots at 60 kvp, 30 m roentgen window gos film other mpp mode (low dark current operation), module (s10128)
ccd area image sensor S8986, s10128 2
>(9 ? . = = @

)(' ) a*' ? 6
' ) a,' ? 6/
! 6/ )'9 ) a(' ! :/
! :/ )'9 ) a&# ! -
! - )&9 ) a&9 ! 6-
! 6- )&9 ) a&9 ! :-
! :- )&9 ) a&9 ! -
! - )&9 ) a&9 ! ! 4
! .&! ; ! .(! )&9 ) a&9 ! 2 4
! .& ; ! .( )&9 ) a&9 ! !
! ' ) a* ! 6
=.. ; >(9 ? . = = @ 6
! 6/ &( &9 ) ! :
! :/ &( &+ &, ! 6

! 6- )'9 ( 9 !
! ) ' ) !
5 ! .&! ; ! .(! ' + % ! ! 5
4
b8 ! .&!b ; ! .(!b )$ )# )* !
5 ! .& ; ! .( '+%! 2 5
4
b8 ! .&b ; ! .(b )$ )# )* !
5 ! - ' + % !

b8 ! -b )$ )# )* !
5 ! :- '+%! :

b8 ! :-b )$ )# )* !
5 ! - ' + % !

b8 ! -b )$ )# )* ! a9 ! 8
! ,*9 9 9(9 ! 7 5 >(9 ? . :4 = = @
c d & )&9=2 ! 5
.& ; .( ) *';''' ) 0 #$#% ) ,'' ) 2 5
&'&(# .& ; .( ) %'' ) 0 #$#% ) (' )

&'&(# - ) ((' ) 0 #$#% ) (' ) :
&'&(# :- ) ((' ) 0 #$#% ) (9' )
&'&(# - ) ,9' ) 0 5
7 d ( '$$$$9 '$$$$# ) ) / ! 6 d + 9 # && ! 6 e d + ) 9'' ) ? ? ? ?? ? ????? ???? ?? ?? ?? ???? ? ??
ccd area image sensor S8986, s10128 ...... ...... 1 vs1 vs2 vs3 vs4 vs1199 vs1200 vs1201 vs1202 2 3 1696 1697 1698 1699 1700 23 1199 1198 1200 d1 d2 s1 s2 s3 s4 s5 s6 s1699 s1700 s1701 s1702 s1703 s1704 d3 d4 ...... x-ray irradiation monitoring photodiode pd p1v ? p2v ? tg ? ss rg ? og sg ? p1h ? p2h ? os od rd 3 electrical and optical characteristics (ta=25 c, unless otherwise noted, v od =15 v) parameter symbol remark min. typ. max. unit vertical 100 200 - horizontal - 300 - full well capacity summing fw - 600 - ke - ccd node sensitivity sv * 5 1.0 1.4 - v/e - dark current (mpp mode) ds * 6 - 250 2,500 e - /pixel/s readout noise nr * 7 - 60 - e - rms dynamic range dr * 8 - 3,333 - - x-ray response non-uniformity xrnu * 9, * 10 - 10 30 % white spots - - 20 point defects * 12 black spots - - 20 cluster defects * 13 --3 blemish * 11 column defects - * 14 --1 - x-ray resolution e r * 9 8 10 - lp/mm *5: v od =15 v, r l (load resistance of emitter follower)=1 k s . *6: dark signal doubles for every 5 to 7 c. *7: -40 c, operating frequency is 1 mhz. *8: dynamic range = full well capacity / readout noise *9: x-ray irradiation of 60 kvp, measured at half of the full well capacity. *10: xrnu (%) = noise / signal 100 noise: fixed pattern noise (peak to peak) in the range that excludes 5 pixels from edges to the center at every position. *11: refer to characteristics and use of fft-ccd area image sensor of technical information. *12: white spots > 10 times of max. dark signal (2500 e - /pixel/s). black spots > 50 % reduction in response relative to adjacent pixels, measured at half of the full well capacity. *13: continuous 2 to 9 point defects. *14: continuous > 10 point defects. device structure kmpdc0220ea pixel format l left horizontal direction c right blank optical black isolation effective isolation optical black blank 2 2 1 1700 1 0 2 top l vertical direction c bottom isolation effective isolation 1 1200 1
ccd area image sensor S8986, s10128 kmpdc0219eb p1v p2v, tg * 17 p1h p2h, sg rg out p2v, tg p1h p2h, sg rg out tpwv 1 vd1 2, 3, ... , 1199, 1200, vd2 vd: vertical dummy enlarged view to v r tpwh, tpws tpwr d1 d2 s1 s2, s3, s4, ... , s1702, s1703, s1704 d3 d4 trigger b (s10128) * 16 pre-integration period integration period readout period ac x-ray exposure (trigger a) * 15 dc x-ray exposure (trigger a) * 15 *15: trigger a (S8986) is the same as ac/dc x-ray exposure form. *16: low active trigger pulse *17: tg terminal can be short-circuited to p2v terminal. 4 . :4 = = @ . 85 8 d &# +' %' ) 3 .&!; .(!; - : ; ('' ) ) . 85 85 &'' 9'' ) : 5; 5 d &# 9 ) ) .&; .( / ) 9' ) 1 . 85 8 &'' 9'' ) : ; + ) ) - / ) 9' ) 1 . 85 8 &' 9' ) :- : ; + ) ) -).& 6 &# +% ) 3 d&#g 5 9' 1 on-board circuit p1v od rd vcc p2v tg p1h p2h sg rg p1v ? 51 k 2.2 2.2 7.5 k 10 k molex 52745-1417 0.1 p2v ? tg ? p1h ? ss ccd chip od og rd os pd 100 10 10 10 10 10 10 p2h ? sg ? rg ? vcc 1 2 3 4 5 6 7 8 9 10 11 12 13 14 trigger a sg p2h p1h reserve rg rd od out gnd tg p2v p1v out trigger a trigger b (S8986) (s10128) gnd kmpdc0218ec kmpdc0219eb timing chart
ccd area image sensor S8986, s10128 dimensional outlines (unit: mm) kmpda0188ea 5 S8986 pin connections (connector on ccd package) pin no. symbol description remark 1 vcc analog power +5 v 2 trigger a trigger a output 3 sg summing gate 4 p2h ccd horizontal register clock-2 5 p1h ccd horizontal register clock-1 6 reserve should be opened 7 rg reset gate 8 rd reset drain 9 od output transistor drain 10 out signal output 11 gnd ground 12 tg transfer gate 13 p2v ccd vertical register clock-2 14 p1v ccd vertical register clock-1 26.5 6.55 24 2.0 1.8 ?0.3 1.0 1.5 c1.0 34.0 active area 3.6 3.0 24.0 gos film 26.4 0.55 0.55 27.5 ?0.4 gos film 35.5 39.5 ?0.5 molex 52745-1417 1 14 1.9 1.0 connector gos film alumina substrate cu-w (0.5 t) ccd chip
ccd area image sensor S8986, s10128 kmpda0192ea 10.55 4.0 34.0 5.15 active area 3.45 (4 ) r2.5 4.0 1.0 1.3 24.0 30.6 3.3 3.3 3.5 5.1 7.4 10.2 9.0 42.6 29.55 13.05 cable 3.5 1.5 2.3 5.1 8.9 r2.0 r2.0 6.0 1.3 5.0 (30?) 6 dimensional outlines (unit: mm) s10128 entire view ccd sensor kmpda0189ea 2000 cable mdr connector (3m 10136-3000pe; 36 terminals) ferrite ccd sensor pin no. 1 2 17 18 19 20 35 36 shroud kmpda0192ea * the shield of cable and the shroud of mdr connector are electrically connected each other. they are short-circuited, so there is no electrical contact to any other positions.
hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, www.hamamatsu.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, t elephone: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?200 6 hamamatsu photonics k.k. cat. no. kmpd1086e03 sept. 2006 dn ccd area image sensor S8986, s10128 7 . . / :4 & -/ - ( ! a9 ! 8 + -

.( ,
k
k 9 :- :
% * : 5 # $ :/ : &' && 6/ 6 &( &+ 6@ &, &9 -/ - &% &* .&! /
4)& &# : 5 &$ : 5 (' .( / 52
4)( (& (( .& / 52
4)& (+ (, -/ - (9 (% :/ : (* (# 6/ 6 ($ +' -/ - +& +( 6@ ++ +, .(! /
4)( +9 +% -

.(! precautions for use (electrostatic countermeasures) *handle these sensors with bare hands or wearing cotton gloves. in addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. *avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. *provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to dis- charge. *ground the tools used to handle these sensors, such as tweezers and soldering irons. it is not always necessary to provide all the electrostatic measures stated above. implement these measures according to the amount of damage that occurs.

▲Up To Search▲

Price & Availability of S8986

	To Download S8986 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .